MAPC-A2004

GaN Amplifier 50 V, 90 W 3.3 - 3.8 GHz

 The MAPC-A2004 is a high power GaN on Silicon Carbide HEMT D-mode amplifier designed for 5G base station applications and optimized for 3.3 - 3.8 GHz modulated signal operation. This device supports pulsed and linear operation with peak output power levels to 90 W (49.5 dBm) in an 7.0 x 6.5 mm DFN package 

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Product Specifications

Part Number
MAPC-A2004
Description
GaN Amplifier 50 V, 90 W 3.3 - 3.8 GHz
Min Frequency(MHz)
3300
Max Frequency(MHz)
3800
Supply Voltage(V)
50
PSAT(W)
90.0
Gain(dB)
15.1
Efficiency
58
Test Freq(GHz)
3.60
Package
7.0 x 6.5 mm DFN
Package Category
DFN

Features

  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Cellular Base Station Applications
  • High Terminal Impedances for Broadband Performance
  • 50 V Operation
  • Compatible with MACOM Power Management Bias Controller/Sequencer MABC-11040
  • 100% RF Tested
  • RoHS* Compliant

Technical Resources

Datasheet

Application Notes

Order from MACOM

MAPC-A2004-ADSB1
Sample Board, MAPC-A2004
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MAPC-A2004-BD000
Amplifier,3.3-3.8 GHz,GaN-SiC,DFN 7x6.5
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MAPC-A2004-BDSB1
Sample Board, MAPC-A2004-B
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MAPC-A2004-BDTR1
Amplifier,3.3-3.8GHz,GaN-SiC,7x6.5,T&R
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Compatible Parts

  • Power Management Controller
    MABC-11040B
    Power Management Bias Controller(PMIC)/Sequencer Supply :-6V, +5V
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