III-V Technologies

Alloys of the elements found in columns III (B, Al, Ga, In) and V (N, P, As Sb) of the periodic table of elements form a III-V compound. These semiconductors (such as InP, GaAs and GaN) are suitable for a wide variety of applications in high-performance radio frequency and optoelectronic devices due to their superior electronic properties such as high electron mobility, high saturated velocity and large band gap.​

MACOM’s European Semiconductor Center portfolio focuses on microwave (uW), millimeterwave (mmW) and terahertz (THz) applications based on GaAs pHEMT and mHEMT and GaN HEMT technologies.