New Products Listing
Below is the list of products released in the last year to MACOM’s already extensive portfolio.
| Part Number | Description |
|---|---|
| GTRB264318FC-V1 | High Power RF GaN on SiC HEMT 400 W; 48 V; 2500 - 2700 MHz |
| CGY2171XBUH | Attenuator, 6-Bit |
| CMPA1C1D060D | 60 W; 12.7 to 13.25 GHz; 40 V; GaN MMIC Power Amplifier |
| PTVA092407NF-V2 | High Power RF LDMOS FET 240 W; 48 V; 869 - 960 MHz |
| GTRA364002FC-V1 | High Power RF GaN on SiC HEMT 400 W; 48 V; 3400 - 3600 MHz |
| CGH60015D-GP4 | 15 W; 6.0 GHz; GaN HEMT Die |
| PXFC192207FH-V3 | High Power RF LDMOS FET 220 W; 28 V; 1805 - 1990 MHz |
| GTVA12600 | High Power RF GaN on SiC HEMT; 600W; 50V; 1200MHz to 1400MHz |
| CGY2176AUH | Attenuator, 6-Bit |
| GTRA214602FC-V1 | High Power RF GaN on SiC HEMT; 490 W; 48 V; 2110 - 2170 MHz |
| GTVA262701FA-V2 | High Power RF GaN on SiC HEMT 270 W; 48 V; 2620 - 2690 MHz |
| CGHV40100 | 100 W; DC CGHV40100 3 GHz; 50 V; GaN HEMT |
| CGHV14800 | 800 W; 1200 - 1400 MHz; GaN HEMT for L - Band Radar Systems |
| CGHV1F025 | 25 W; DC - 15 GHz; 40 V; GaN HEMT |
| WSGPA01-V1-R3K | 10 W; 5 GHz; GaN on SiC General Purpose Power Amplifier |
| PTRA097058NB-V1 | High Power RF LDMOS FET; 800 W; 48 V; 730 - 960 MHz |
| CGH55030 | 30 W; 5500 - 5800 MHz; 28 V; GaN HEMT for WiMAX |
| CGH40035 | 35 W RF Power GaN HEMT |
| CMPA851A005S | 8.5 - 10.5 GHz, 4.5W GaN MMIC HPA |
| CGHV31500 | 500W, 2.7 - 3.1 GHz, GaN IMFET |
| JBTestImport05262301 | |
| CMPA5259050 | 50 W; 5200 - 5900 MHz; 28 V; GaN MMIC for Radar Power Amplifiers |
| PTVA04350 | High Power RF LDMOS FETs 350 W; 50 V; 470 - 860 MHz |
| CGH55015 | 10 W; C - band; Unmatched; GaN HEMT |
| CGHV35120F | 120 W; 2.9 - 3.8 GHz; 50 V; GaN HEMT for S-Band Radar Systems |
| CGHV27015S | 15 W; DC - 6.0 GHz; 50 V; GaN HEMT |
| PTRA093818NF-V1 | High Power RF LDMOS FET 415 W; 48 V; 925 - 960 MHz |
| CG2H80045D-GP4 | 45 W, 8.0 GHz, GaN HEMT Die |
| PXFC191507FC-V1 | High Power RF LDMOS FET 150 W; 28 V; 1805 - 1990 MHz |
| CMPA1H1J050 | 17.3 - 18.4 GHz, 60W GaN MMIC HPA |
| GTRA374902FC-V1 | High Power RF GaN on SiC HEMT 450 W; 48 V; 3600 - 3700 MHz |
| CGH35060P1 | 60 W; 3300 - 3600 MHz; 28 V; GaN HEMT for WiMAX |
| WS1A2639-V1-R3K | 38.5 dBm GaN on SiC Power Amplifier Module; 2496-2690 MHz |
| PTRA084808NF-V1 | High Power RF LDMOS FET 550 W; 48 V; 734 - 821 MHz |
| CGH40120 | 120 W RF Power GaN HEMT |
| GTVA220701FA-V1 | High Power RF GaN on SiC HEMT 70 W; 50 V; 1805 - 2170 MHz |
| CGHV27030 | 30 W; DC - 6.0 GHz; GaN HEMT |
| PXAE261908NF-V1 | High Power RF LDMOS FET 240 W,28 V, 2515 - 2675 MHz |
| PTVA035002EV-V1 | High Power RF LDMOS FET 500 W; 50 V; 390 - 450 MHz |
| CMPA2735030 | 30 W; 2.7 - 3.5 GHz; 50 V; GaN MMIC Power Amplifier |
| GTRA263902FC-V2 | High Power RF GaN on SiC HEMT 370 W; 48 V; 2495 - 2690 MHz |
| GTRA184602FC-V1 | High Power RF GaN on SiC HEMT; 460 W; 48 V; 1805 - 1880 MHz |
| PTVA047002EV-V1 | High Power RF LDMOS FET 700 W; 50 V; 470 - 806 MHz |
| CGHV14250 | 250 W; DC - 1600 MHz; GaN HEMT for L - Band Radar Systems |
| CGHV40050 | 50 W; DC - 4.0 GHz; 50 V; GaN HEMT |
| CGHV1J006D-GP4 | 6 W; 18.0 GHz; GaN HEMT Die |
| GTRB097152FC-V1 | High Power RF GaN on SiC HEMT 900 W, 48 V, 758 - 960 MHz |
| CMPA601C025 | 25 W; 6.0 - 12.0 GHz; GaN MMIC; Power Amplifier |
| CG2H80060D-GP4 | 60 W; 8.0 GHz; GaN HEMT Die |
| CMPA1842040 | 1.8 - 4.2 GHz, 45 W GaN MMIC HPA |
| CG2H40120 | 120 W; RF Power GaN HEMT |
| PTRA084858NF-V1 | High Power RF LDMOS FET; 615 W; 48 V; 730 - 960 MHz |
| CGHV35060MP | 60 W; 2700 to 3800 MHz; 50 V; GaN HEMT for S-Band Radar and LTE Base Stations |
| PTVA12350 | High Power RF LDMOS FETs 350 W; 50 V; 1200 - 1400 MHz |
| CGHV40200 | 200 W RF Power GaN HEMT |
| CGHV38375F | 2.75 - 3.75, 400W GaN on SiC HPA |
| GTVA212701FA-V2 | High Power RF GaN on SiC HEMT 270 W; 48 V; 2110 - 2200 MHz |
| CGH35240 | 240 W; 3100 - 3500 MHz; 50 - ohm Input/Output - Matched; GaN HEMT for S - Band Radar Systems |
| JBTestImport05262302 | |
| PTVA127002EV-V1 | High Power RF LDMOS FET 700 W; 50 V; 1200 - 1400 MHz |
| CGHV96050F2 | 50 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched GaN HEMT |
| CMPA851A012 | 8.5 - 10.5 GHz, 20 W GaN MMIC HPA |
| PTRA083818NF-V1 | High Power RF LDMOS FET 275 W; 48 V; 733 - 805 MHz |
| GTRA362002FC-V1 | High Power RF GaN on SiC HEMT 200 W; 48 V; 3400 - 3600 MHz |
| CGH31240F | 240 W; 2700 - 3100 MHz; 50 - ohm Input/Output Matched GaN HEMT for S - Band Radar Systems |
| CGHV1F006 | 6 W; DC - 15.0 GHz; 40 V; GaN HEMT |
| CGH27060F | 8 W (average); 28 V; GaN HEMT for linear communications ranging from VHF to 3 GHz |
| GTRA360502M-V1 | High Power RF GaN on SiC HEMT 50 W; 48 V; 3400 - 3800 MHz |
| CMPA2738060 | 80 W; 2.7 - 3.8 GHz; GaN MMIC; Power Amplifier |
| CMPA5259100 | 5.0 - 5.9 GHz, 100W GaN MMIC HPA |
| GTRA362802FC-V1 | High Power RF GaN on SiC HEMT 280 W; 48 V; 3400 - 3600 MHz |
| PTFC270101M-V1 | High Power RF LDMOS FET 10 W; 28 V; 900 - 2700 MHz |
| CMPA0060025 | 25 W; DC - 6.0 GHz; GaN MMIC Power Amplifier |
| CMPA0060002 | 2 W; 20 MHz - 6000 MHz; GaN MMIC Power Amplifier |
| CGHV35150 | 150 W; 2900 - 3500 MHz; 50 V; GaN HEMT for S-Band Radar Systems |
| CG2H80120D-GP4 | 120 W; DC - 8000 MHz; 28 V; GaN HEMT Die |
| CGH40045 | 45 W RF Power GaN HEMT |
| PTVA12025 | High Power RF LDMOS FET 25 W; 500 - 1400 MHz |
| PXAD214218FV-V1 | High Power RF LDMOS FET 430 W; 28 V; 2110 - 2170 MHz |
| CMPA0560008 | MMIC Power Amplifier, 10 W, 0.5 - 6 GHz |
| GTRA260502M-V1 | High Power RF GaN on SiC HEMT 45 W; 48 V; 2515 - 2675 MHz |
| GTRA262802FC-V2 | High Power RF GaN on SiC HEMT 250 W; 48 V; 2490 - 2690 MHz |
| PTRA097008NB-V1 | High Power RF LDMOS FET 630 W; 48 V; 920 - 960 MHz |
| WST33H0NC | 2.4 - 2.5 GHz, 300W GaN Transistor |
| PTVA084007NF-V1 | High Power RF LDMOS FET 370 W; 48 V; 755 - 805 MHz |
| CGH21240 | 240 W; 1800 - 2300 MHz; GaN HEMT for WCDMA; LTE; WiMAX |
| CG2H40025 | 25 W RF Power GaN HEMT |
| CGH27015 | 15 W; 28 V; GaN HEMT for Linear Communications ranging from VHF to 3 GHz |
| PXAE183708NB-V1 | High Power RF LDMOS FET 320 W; 28 V; 1805 - 1880 MHz |
| CGHV96100 | 100 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched; GaN HEMT Power Amplifier |
| PTVA04250 | High Power RF LDMOS FETs 250 W; 50 V; 470 - 806 MHz |
| CG2H40010 | 10 W RF Power GaN HEMT |
| CGHV96050 | 50 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output Matched GaN HEMT |
| GTVA101K4 | High Power RF GaN on SiC HEMT 1400 W; 50 V; 0.96 - 1.4 GHz |
| CGH60120D-GP4 | 120 W; 6.0 GHz; GaN HEMT Die |
| CMPA901A035 | 35 W; 9.0 - 10.0 GHz; 28 V; GaN MMIC for Radar Power Amplifiers |
| PTRA095908NB-V1 | High Power RF LDMOS FET; 520 W; 48 V; 925 - 960 MHz |
| CMPA2735015 | 15 W; 2.7 to 3.5 GHz; 50 V; GaN MMIC Power Amplifier |
| PTRA094808NF-V1 | High Power RF LDMOS FET 480 W; 48 V; 859 - 960 MHz |
| CGHV60075D5-GP4 | 75 W; 6.0 GHz; GaN HEMT Die |
| CMPA1D1J001 | 12.7 - 18 GHz, 1W GaN MMIC HPA |
| CGHV60040D-GP4 | 40 W; 6.0 GHz; GaN HEMT Die |
| CGY2390SUH | Attenuator, 3-Bit |
| CGH60060D-GP4 | 60 W; 6.0 GHz; GaN HEMT Die |
| PTVA102001EA-V1 | High Power RF LDMOS FET 200 W; 50 V; 960 - 1600 MHz |
| PXAC210552FC-V1 | High Power RF LDMOS FET 55 W; 28 V; 1805 - 2170 MHz |
| PTVA101K02EV-V1 | High Power RF LDMOS FET 1000 W; 50 V; 1030 / 1090 MHz |
| PTRA087008NB-V1 | High Power RF LDMOS FET 650 W; 48 V; 755 - 805 MHz |
| GTRA412852FC-V1 | High Power RF GaN on SiC HEMT 235 W; 48 V; 3700 - 4100 MHz |
| CMPA0530002 | 2 W; 0.5 - 3.0 GHz; Input Matched to 50 ohms, GaN MMIC for Pre-driver/Driver Amplifier Applications |
| CMPA0527005 | 5 W; 0.5 - 2.7 GHz; 50 V; GaN MMIC for Power Amplifiers |
| WS1A3940-V1-R3K | 39.5 dBm GaN on SiC Power Amplifier Module; 3700-3980 MHz |
| CGHV1J070D-GP4 | 70 W; 18.0 GHz; GaN HEMT Die |
| CGH40180 | 180 W RF Power GaN HEMT |
| CMPA901A020 | 9.0 - 10.0 GHz; 20 W; Packaged GaN MMIC Power Amplifier |
| CGHV35400 | 400 W; 2900 - 3500 MHz; 50 ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems |
| PXFE211507FC-V1 | High Power RF LDMOS FET 170 W; 28 V; 2110 - 2170 MHz |
| CMPA801B030 | 30 W; 7.9 - 11.0 GHz; GaN MMIC; Power Amplifier |
| PTRA094858NF-V1 | High Power RF LDMOS FET; 400 W; 48 V; 859 - 960 MHz |
| GTVA261802FC-V1 | High Power RF GaN on SiC HEMT 170 W; 48 V; 2620 - 2690 MHz |
| CMPA9396025 | 25 W; 9.3 - 9.6 GHz GaN MMIC Power Amplifier |
| CGHV59070 | 70 W; 4500 to 5900 MHz; internally matched GaN HEMT for C-Band Radar Systems |
| WS1A3640-V1-R3K | 39.5 dBm GaN on SiC Power Amplifier Module; 3300-3800 MHz |
| CMPA5585030 | 30 W; 5.5 - 8.5 GHz; GaN MMIC Power Amplifier |
| CGHV1J025D-GP4 | 25 W; 18.0 GHz; GaN HEMT Die |
| GTRB186002FC-V1 | High Power RF GaN on SiC HEMT 500 W, 48 V, 1805 - 1880 MHz |
| CMPA2935150 | 150W; 2.9 - 3.5 GHz; GaN MMIC |
| CGHV37400F | 400 W; 3300 - 3700 MHz; 50 ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems |
| CGH21120 | 120 W; 1800 - 2300 MHz; GaN HEMT for WCDMA; LTE; WiMAX |
| CGHV40180 | 180 W; DC - 2 GHz; GaN HEMT |
| CMPA5259080 | High power C-band MMIC for pulsed radar operation. |
| CMPA2060035 | 35 W; 2.0 - 6.0 GHz; 28V; GaN MMIC Power Amplifier |
| CGHV96050F1 | 50 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output Matched GaN HEMT |
| CGHV40030 | 30 W; DC - 6 GHz; 50 V; GaN HEMT |
| CMPA2735075 | 75 W; 2.7 - 3.5 GHz; GaN MMIC Power Amplifier |
| CMPA1E1F060 | 13.75 - 15.5 GHz, 60W GaN MMIC HPA |
| PTNC210604MD-V2 | Wideband LDMOS Two-stage Integrated Power Amplifier 20 W + 40 W; 28 V; 1805 - 2200 MHz |
| GTVA261701FA-V1 | High Power RF GaN on SiC HEMT 170 W; 50 V; 2.62 - 2.69 GHz |
| CGH40025 | 25 W RF Power GaN HEMT |
| CGHV14500 | 500 W; 1200 - 1400 MHz; GaN HEMT for L - Band Radar Systems |
| CGH40010 | 10 W RF Power GaN HEMT |
| CGHV50200 | 200 W; 4400 - 5000 MHz; 50 ohm Input/Output-Matched; GaN HEMT |
| CMPA2560025 | 25 W; 2.5 - 6.0 GHz; GaN MMIC Power Amplifier |
| PTVA030121EA-V1 | High Power RF LDMOS FET 12 W; 50 V; 390 - 450 MHz |
| GTVA10700 | High Power RF GaN on SiC HEMT 700 W; 50 V; 960 - 1215 MHz |
| CMPA851A025 | 8.5 - 10.5 GHz, 40 W GaN MMIC HPA |
| GTVA263202FC-V1 | High Power RF GaN on SiC HEMT 340 W; 48 V; 2620 - 2690 MHz |
| CGHV59350 | 350 W; 5200 to 5900 MHz; 50 ohm Input/Output-Matched; GaN HEMT |
| PTVA120501EA-V1 | High Power RF LDMOS FET 50 W; 50 V; 1200 - 1400 MHz |
| CGHV1A250 | 8.8 - 9.6 GHz, 300 W, 45 V, Packaged GaN Transistor |
| CGHV40320D-GP4 | 320 W; 4.0 GHz; GaN HEMT Die |
| CGH40006 | 6 W RF Power GaN HEMT |
| CGH27030 | 30 W; DC - 6.0 GHz; 28 V; GaN HEMT |
| PTRA082808NF-V1 | High Power RF LDMOS FET 280 W; 48 V; 790 - 820 MHz |
| CMPA5259025 | 25 W; 5200 - 5900 MHz; 28 V; GaN MMIC for Radar Power Amplifiers |
| CMPA1D1E025 | 25 W; 13.75 to 14.5 GHz; 40 V; Ku-Band GaN MMIC Power Amplifier |
| Test-Part11172301 | Test-Part11172301 |
| PXFE181507FC-V1 | High Power RF LDMOS FET 175 W; 28 V; 1805 - 1880 MHz |
| CMPA851A050 | 8.5 - 10.5 GHz GaN MMIC HPA |
| CMPA601J025 | 6 - 18 GHz, 25W GaN MMIC HPA |
| CGH60030D-GP4 | 30 W; 6.0 GHz; GaN HEMT Die |
| PXAD184218FV-V1 | High Power RF LDMOS FET 420 W; 28 V; 1805 - 1880 MHz |
| PTGA090304MD-V2 | Wideband LDMOS Two-stage Integrated Power Amplifier 2 X 15 W; 48 V; 575 - 960 MHz |
| CMPA0760020 | 0.7 - 6.0 GHz, 25W GaN MMIC HPA |
| GTRA384802FC-V1 | High Power RF GaN on SiC HEMT 400 W; 48 V; 3600 - 3800 MHz |
| PTVA104501EH-V1 | High Power RF LDMOS FET 450 W; 50 V; 960 - 1215 MHz |
| CMPA1F1H060 | 15.4 - 17.7 GHz, 80 W GaN MMIC HPA |
| CMPA3135060S | 3.1 - 3.5 GHz; 60 W; Packaged GaN MMIC Power Amplifier |
| CGHV96130F | 130 W; 8.4 - 9.6 GHz; 50 ohm; Input/Output Matched GaN HEMT for X-Band Radar Applications |
| GTVA262711FA-V2 | High Power RF GaN on SiC HEMT 300 W; 48 V; 2620 - 2690 MHz |
| PTMC210404MD-V2 | Wideband LDMOS Two-stage Integrated Power Amplifier 2 x 20 W; 28 V; 1805 - 2200 MHz |
| CGH35015 | 15 W; 3300 - 3900 MHz; 28 V; GaN HEMT for WiMAX |
| GTRB267008FC-V1 | High Power RF GaN on SiC HEMT 620 W, 48 V, 2496 - 2690 MHz |
| GTRB226002FC-V1 | High Power RF GaN on SiC HEMT 450 W, 48 V, 2110 - 2200 MHz |
| CGHV60170D-GP4 | 170 W; 6.0 GHz; 50 V GaN HEMT Die |
| CGH25120F | 120 W; 2300 - 2700 MHz; GaN HEMT for WiMAX and LTE |
| CGHV27060 | 60 W; DC to 2700 MHz; 50 V; GaN HEMT for LTE and Pulse-Radar Applications |
| CG2H30070 | 70 W; 0.5 - 3.0 GHz; GaN HEMT |
| CG2H80015D-GP4 | 15 W; 8.0 GHz ; GaN HEMT Die |
| CGH40090 | 90 W RF Power GaN HEMT |
| CG2H40045 | 45 W RF Power GaN HEMT |
| CG2H80030D-GP4 | 30 W; 8.0 GHz; GaN HEMT Die |
| PXAE213708NB-V1 | High Power RF LDMOS FET 400 W; 28 V; 2110 - 2200 MHz |
| CGH27015P | 15 W; 28 V; GaN HEMT for Linear Communications ranging from VHF to 3 GHz |
| PTVA082407NF-V2 | High Power RF LDMOS FET 240 W; 48 V; 746 - 821 MHz |
| CGH35060FP2 | 60 W; 3100 - 3500 MHz; 28 V GaN HEMT |
| CGH60008D-GP4 | 8 W; 6.0 GHz; GaN HEMT Die |
| GTRB266908FC-V1 | High Power RF GaN on SiC HEMT 500 W, 48 V, 2515 - 2675 MHz |
| CMPA1D1E030 | 30 W; 13.75 to 14.5 GHz; 40 V; GaN MMIC Power Amplifier |
| CMPA1C1D080 | 90 W; 12.75 - 13.25 GHz; GaN MMIC; Power Amplifier |
| GTRB224402FC-V1 | High Power RF GaN on SiC HEMT 400 W, 48 V, 2110 - 2200 MHz |
| PTAC240502FC-V1 | High Power RF LDMOS FET 50 W; 28 V; 2300 - 2400 MHz |
| PXAE263708NB-V1 | High Power RF LDMOS FET 400 W (P3dB); 28 V; 2620 - 2690 MHz |
| PTFC210202FC-V1 | High Power RF LDMOS FET 28 W; 28 V; 1800 - 2200 MHz |
| CG2H40035 | 35 W RF Power GaN HEMT |