New Products Listing

Below is the list of products released in the last year to MACOM’s already extensive portfolio.

Part Number Description
MAAL-011258 Low Noise Amplifier, 13 to 15 GHz
GTRB266502FC High Power RF GaN-on-SiC HEMT 630 W, 48 V, 2620 - 2690 MHz
WGC26420 Thermally Enhanced GaN Amplifier 400 W, 48 V, 2620 - 2690 MHz
MADS-011082-12790T Surface Mount Zero Bias Schottky Diode
MARP-PT12G PT-12G Photoreceiver
MADL-011126-DIE Diode Limiter, 2 to 40 GHz
MAAP-011377 Power Amplifier, 0.25 W
WSGPA01-V1-R3K 10 W; 5 GHz; GaN on SiC General Purpose Power Amplifier
MAAL-011234 Low Noise, Low Input Impedance Pre-Amplifier 1.5T and 3T Applications
PTRA084808NF-V1 High Power RF LDMOS FET 550 W; 48 V; 734 - 821 MHz
MADL-011125-DIE Diode Limiter, 2 to 20 GHz
WS1A3940-V1-R3K 39.5 dBm GaN-on-SiC Power Amplifier Module; 3700-3980 MHz
MAAP-011413-DIE 10W, Ka Band Power Amplifier
MAAL-011250-DIE X–Band, High Input Power, GaN Low Noise Amplifier
CGHV59350 350 W; 5200 to 5900 MHz; 50 ohm Input/Output-Matched; GaN HEMT
GTRA374902FC-V1 High Power RF GaN-on-SiC HEMT 450 W, 48 V, 3600 - 3700 MHz
MKVC-0547R0-13920T Si Hi Q Shunt Capacitors 50 V MACOM KV CAPS™
PXAD184218FV-V1 High Power RF LDMOS FET 420 W; 28 V; 1805 - 1880 MHz
MAPD-011059 3-Way Power Divider 5 - 1800 MHz
MAXP-37605A 25 Gbps 288x288, 160x160 Crosspoint Switch & Signal Conditioner
GTRB097152FC High Power RF GaN-on-SiC HEMT 900 W, 48 V, 758 - 960 MHz
WGC22630 Thermally Enhanced GaN Amplifier 630 W, 48 V, 2110 - 2200 MHz
GTVA263202FC-V1 High Power RF GaN-on-SiC HEMT 340 W, 48 V, 2620 - 2690 MHz
WGC27550V1A Thermally Enhanced GaN on SiC Amplifier
WGC27630 Thermally Enhanced GaN Amplifier 600 W, 48 V, 2620 - 2690 MHz
PTVA092407NF-V2 High Power RF LDMOS FET 240 W; 48 V; 869 - 960 MHz
GTRA214602FC High Power RF GaN-on-SiC HEMT, 490 W, 48 V, 2110 - 2170 MHz
PXAE213708NB High Power RF LDMOS FET 400 W; 28 V; 2110 - 2200 MHz
PTNC210604MD-V2 Wideband LDMOS Two-stage Integrated Power Amplifier 20 W + 40 W; 28 V; 1805 - 2200 MHz
PTRA097008NB-V1 High Power RF LDMOS FET 630 W; 48 V; 920 - 960 MHz
MAAM-011361 High Gain High Linearity 0.5 W Driver Amplifier
MACP-011117 Coupler, 8 dB
WST4200D GaN-on-SiC Transistor, 30 W, 28 V, DC - 6 GHz
MAAP-011378 Power Amplifier, 0.5 W
GTRA384802FC-V1 High Power RF GaN-on-SiC HEMT 400 W, 48 V, 3600 - 3800 MHz
MAPC-A1600 GaN Amplifier 160 V, 150 W - MACOM PURE CARBIDE
GTVA261701FA-V1 High Power RF GaN-on-SiC HEMT 170 W, 50 V, 2.62 - 2.69 GHz
PTMC210404MD-V2 Wideband LDMOS Two-stage Integrated Power Amplifier 2 x 20 W; 28 V; 1805 - 2200 MHz
MKVC-050100-13920T Si Hi Q Shunt Capacitors 50 V MACOM KV CAPS™
MAPC-A3007 GaN-on-SiC Transistor, 30 W, 28 V, DC - 6 GHz
GTVA212701FA-V2 High Power RF GaN-on-SiC HEMT 270 W, 48 V, 2110 - 2200 MHz
MAAP-011379-DIE Power Amplifier, 1 W
WSM5100S 8.5 - 10.5 GHz, 16W GaN T/R Module
MADL-011116 Diode Limiter
CGH09120F 120-W; UHF – 2.5-GHz; GaN HEMT for WCDMA; LTE; MC-GSM
MAAP-011307 High Linearity Distributed Power Amplifier
MAAL-011246-DIE Low Noise Amplifier 22 - 48 GHz
CMPA2060040D1 GaN High Power Amplifier, 40 W 2.0 -6.0 GHz
MAPC-A1521 GaN Amplifier 50 V, 150 W
PXAD214218FV-V1 High Power RF LDMOS FET 430 W; 28 V; 2110 - 2170 MHz
MAEQ-39908 Eight Channel 56GBaud (112Gbps) PAM-4 Linear Equalizer
MAAL-011287 Low Noise Amplifier with Bypass, 1400 to 6000 MHz
MAAL-011245-DIE Low Noise Amplifier 27 - 31.5 GHz
GTVA262701FA-V2 High Power RF GaN-on-SiC HEMT 270 W, 48 V, 2620 - 2690 MHz
GTVA262711FA High Power RF GaN-on-SiC HEMT 300 W, 48 V, 2620 - 2690 MHz
MAPC-A3006 GaN-on-SiC Transistor, 18 W, 28 V, DC - 8 GHz
MADP-011184 PIN Diode
MA4P4006-1041 PIN Diode
MACP-011118 Coupler, 17.3 dB 5 - 1800 MHz
GTRB224402FC-V1 High Power RF GaN-on-SiC HEMT 400 W, 48 V, 2110 - 2200 MHz
MALD-39225 Dual 53GBaud PAM4/NRZ VCSEL Driver
GTRA362802FC-V1 High Power RF GaN-on-SiC HEMT 280 W, 48 V, 3400 - 3600 MHz
MAEQ-40914 Quad Channel 227Gbps PAM-4 Linear Equalizer
MLP7131-2012 Surface Mount Limiter PIN Diode
MACP-011079 Coupler, 8 dB
PXAE183708NB High Power RF LDMOS FET 320 W; 28 V; 1805 - 1880 MHz
MAMX-011144 Double-Balanced Mixer
PTVA082407NF High Power RF LDMOS FET 240 W; 48 V; 746 - 821 MHz
GTRA412852FC-V1 High Power RF GaN-on-SiC HEMT 235 W, 48 V, 3700 - 4100 MHz
MACP-011113 Directional Coupler
MAPC-A1524 GaN Amplifier 45 V, 400 W
GTRA263902FC-V2 High Power RF GaN-on-SiC HEMT 370 W; 48 V; 2495 - 2690 MHz
MAPC-A3009 GaN-on-SiC Transistor, 60 W, 28 V, DC - 4 GHz
MABA-011160 1:2 Transmission Line Balun
GTRB184402FC High Power RF GaN-on-SiC HEMT 440 W, 48 V, 1805 - 1880 MHz
WST4050D GaN-on-SiC Transistor, 10 W, 28 V, DC - 8 GHz
PTRA093818NF-V1 High Power RF LDMOS FET 415 W; 48 V; 925 - 960 MHz
PTRA087008NB-V1 High Power RF LDMOS FET 650 W; 48 V; 755 - 805 MHz
WSDC2640-V1 Thermally Enhanced GaN on SiC Ampl
MAPC-C22440 Thermally Enhanced GaN Amplifier 400 W, 48 V, 2110 - 2200 MHz
MAAL-011222 Low Noise Amplifier with Bypass, 650 to 4200 MHz
GTRB266908FC-V1 High Power RF GaN-on-SiC HEMT 500 W, 48 V, 2515 - 2675 MHz
MAAP-011378-DIE Power Amplifier, 0.5 W
MAXP-37170F 25 Gbps 288x288, 160x160 Crosspoint Switch & Signal Conditioner
WGC40680V1A Thermally Enhanced GaN Amplifier 500 W, 48 V, 3700 - 3980 MHz
WSGPC01-V1 Thermally Enhanced GaN on SiC Ampl
WS1A2639-V1-R3K 38.5 dBm GaN on SiC Power Amplifier Module; 2496-2690 MHz
MAAP-011422-DIE 10W, Ka Band Power Amplifier
PXAE263708NB-V1 High Power RF LDMOS FET 400 W (P3dB); 28 V; 2620 - 2690 MHz
GTVA220701FA High Power RF GaN-on-SiC HEMT 70 W, 50 V, 1805 - 2170 MHz
GTVA261802FC-V1 High Power RF GaN-on-SiC HEMT 170 W, 48 V, 2620 - 2690 MHz
MACP-011083 Coupler, 12.7 dB 5 - 1800 MHz
MAPC-P1040 GaN Amplifier Pallet 50 V, 300 W 2400 - 2500 MHz
MASW-011226 SP4T Absorptive Switch
PXFC191507FC-V1 High Power RF LDMOS FET 150 W; 28 V; 1805 - 1990 MHz
GTRA184602FC-V1 High Power RF GaN-on-SiC HEMT, 460 W, 48 V, 1805 - 1880 MHz
PTRA084858NF-V1 High Power RF LDMOS FET; 615 W; 48 V; 730 - 960 MHz
PTGA090304MD-V2 Wideband LDMOS Two-stage Integrated Power Amplifier 2 X 15 W; 48 V; 575 - 960 MHz
GTRB424908FC High Power RF GaN-on-SiC HEMT 450 W, 48 V, 3700 - 3980 MHz
MAAP-011420-DIE 1 W High Performance GaN Travelling Wave Amplifier MMIC
MAAL-011229 Low Noise Amplifier, 17 to 55 GHz
MAPC-A1106 GaN Amplifier 50 V, 85 W
MKVC-0547R0 -14460T Si Hi Q Shunt Capacitors 50 V MACOM KV CAPS™
PTRA094808NF-V1 High Power RF LDMOS FET 480 W; 48 V; 859 - 960 MHz
GTRB204402FC High Power RF GaN-on-SiC HEMT 350 W, 48 V, 1930 - 2020 MHz
MKVC-050100-14460T Si Hi Q Shunt Capacitors 50 V MACOM KV CAPS™
WST4100D GaN-on-SiC Transistor, 15 W, 28 V, DC - 8 GHz
GTRA364002FC High Power RF GaN-on-SiC HEMT 400 W; 48 V; 3400 - 3600 MHz
WS1A3640 39.5 dBm GaN-on-SiC Power Amplifier Module; 3300-3800 MHz
GTRA262802FC High Power RF GaN-on-SiC HEMT 250 W; 48 V; 2490 - 2690 MHz
MAAL-011251-DIE GaN Low Noise Amplifier
MAAP-011423-DIE 7.5W, Power Amplifier 37 - 43 GHz
MASW-011186-Q SPDT Reflective Switch
PXAE261908NF-V1 High Power RF LDMOS FET 240 W,28 V, 2515 - 2675 MHz
WGC20630-V1A Thermally Enhanced GaN Amplifier 630 W, 48 V, 1930 - 2020 MHz
GTRB226002FC-V1 High Power RF GaN-on-SiC HEMT 450 W, 48 V, 2110 - 2200 MHz
MASW-011209 High Power Reflective SP2T Surface Mount Switch
GTRB264318FC-V1 High Power RF GaN-on-SiC HEMT 400 W, 48 V, 2500 - 2700 MHz
MACP-011108 Coupler, 17.3 dB
GTRB266702FCV1A High Power RF GaN on SiC HEMT, 610W, 48V, 2620-2690 MHz
MAAP-011379 Power Amplifier, 1 W
MAAP-011410-DIE 10W, Ka Band Power Amplifier
MAEQ-40904 Quad Channel 227Gbps Linear Equalizer
MACP-011119 12 dB Coupler, 5 - 1800 MHz
MAAP-011325 Power Amplifier, 0.25 W
GTRA362002FC-V1 High Power RF GaN-on-SiC HEMT 200 W; 48 V; 3400 - 3600 MHz
MABT-011011 Bias Tee 0.03 - 67 GHz, 4mm SMD
WGC18630 Thermally Enhanced GaN Amplifier 48 V, 610 W
GTRB206002FC High Power RF GaN-on-SiC HEMT 500 W, 48 V, 1930 - 2020 MHz
GTVB222611FAV1A High Power RF GaN on SiC HEMT, 260W, 48V, 1805-2170 MHz
MAAM-011302 High Gain High Linearity 0.5 W Driver Amplifier
MAPC-A1001 GaN Amplifier 50 V, 50 W
GTRB246608FC-V1 High Power RF GaN-on-SiC HEMT 500 W, 48 V, 2300 - 2400 MHz
MAPC-A3005 GaN-on-SiC Transistor, 10 W, 28 V, DC - 8 GHz
MAAP-011307-DIE High Linearity Distributed Power Amplifier
PTRA095908NB-V1 High Power RF LDMOS FET; 520 W; 48 V; 925 - 960 MHz
MADL-011115 Diode Limiter
GTRB384608FC-V1 High Power RF GaN-on-SiC HEMT 400 W, 48 V, 3300 - 3800 MHz
MATA-39224 Dual Linear 112Gbps PAM4 Transimpedance Amplifier
MAAM-011337 LO Buffer Amplifier
MASW-011208 High Power Reflective SP3T Surface Mount Switch
PTRA082808NF-V1 High Power RF LDMOS FET 280 W; 48 V; 790 - 820 MHz
GTRB097152NCV1A Thermally Enhanced GaN Amplifier 820 W, 48 V, 758 - 960 MHz
GTRB186002FC-V1 High Power RF GaN-on-SiC HEMT 500 W, 48 V, 1805 - 1880 MHz
MAPC-A1529 GaN Amplifier 100 V, 1450 W Rev. V2P 3 - 700 MHz
PTVA084007NF High Power RF LDMOS FET 370 W; 48 V; 755 - 805 MHz
PTRA083818NF-V1 High Power RF LDMOS FET 275 W; 48 V; 733 - 805 MHz
MADL-011121 High Peak Power Surface Mount Limiter 2 - 18 GHz
MADL-011122-DIE Diode Limiter
MACP-011114 Coupler, 7 dB
GTRB267008FC-V1 High Power RF GaN-on-SiC HEMT 620 W, 48 V, 2496 - 2690 MHz
MASW-011201 Switch, SP4T, 50 W
PTRA097058NB-V1 High Power RF LDMOS FET; 800 W; 48 V; 730 - 960 MHz
MAPC-A2025 GaN Amplifier 32 V, 8 W
MACP-011096 Bi-Directional Coupler