New Products Listing
Below is the list of products released in the last year to MACOM’s already extensive portfolio.
Part Number | Description |
---|---|
MAAL-011258 | Low Noise Amplifier, 13 to 15 GHz |
GTRB266502FC | High Power RF GaN-on-SiC HEMT 630 W, 48 V, 2620 - 2690 MHz |
WGC26420 | Thermally Enhanced GaN Amplifier 400 W, 48 V, 2620 - 2690 MHz |
MADS-011082-12790T | Surface Mount Zero Bias Schottky Diode |
MARP-PT12G | PT-12G Photoreceiver |
MADL-011126-DIE | Diode Limiter, 2 to 40 GHz |
MAAP-011377 | Power Amplifier, 0.25 W |
WSGPA01-V1-R3K | 10 W; 5 GHz; GaN on SiC General Purpose Power Amplifier |
MAAL-011234 | Low Noise, Low Input Impedance Pre-Amplifier 1.5T and 3T Applications |
PTRA084808NF-V1 | High Power RF LDMOS FET 550 W; 48 V; 734 - 821 MHz |
MADL-011125-DIE | Diode Limiter, 2 to 20 GHz |
WS1A3940-V1-R3K | 39.5 dBm GaN-on-SiC Power Amplifier Module; 3700-3980 MHz |
MAAP-011413-DIE | 10W, Ka Band Power Amplifier |
MAAL-011250-DIE | X–Band, High Input Power, GaN Low Noise Amplifier |
CGHV59350 | 350 W; 5200 to 5900 MHz; 50 ohm Input/Output-Matched; GaN HEMT |
GTRA374902FC-V1 | High Power RF GaN-on-SiC HEMT 450 W, 48 V, 3600 - 3700 MHz |
MKVC-0547R0-13920T | Si Hi Q Shunt Capacitors 50 V MACOM KV CAPS™ |
PXAD184218FV-V1 | High Power RF LDMOS FET 420 W; 28 V; 1805 - 1880 MHz |
MAPD-011059 | 3-Way Power Divider 5 - 1800 MHz |
MAXP-37605A | 25 Gbps 288x288, 160x160 Crosspoint Switch & Signal Conditioner |
GTRB097152FC | High Power RF GaN-on-SiC HEMT 900 W, 48 V, 758 - 960 MHz |
WGC22630 | Thermally Enhanced GaN Amplifier 630 W, 48 V, 2110 - 2200 MHz |
GTVA263202FC-V1 | High Power RF GaN-on-SiC HEMT 340 W, 48 V, 2620 - 2690 MHz |
WGC27550V1A | Thermally Enhanced GaN on SiC Amplifier |
WGC27630 | Thermally Enhanced GaN Amplifier 600 W, 48 V, 2620 - 2690 MHz |
PTVA092407NF-V2 | High Power RF LDMOS FET 240 W; 48 V; 869 - 960 MHz |
GTRA214602FC | High Power RF GaN-on-SiC HEMT, 490 W, 48 V, 2110 - 2170 MHz |
PXAE213708NB | High Power RF LDMOS FET 400 W; 28 V; 2110 - 2200 MHz |
PTNC210604MD-V2 | Wideband LDMOS Two-stage Integrated Power Amplifier 20 W + 40 W; 28 V; 1805 - 2200 MHz |
PTRA097008NB-V1 | High Power RF LDMOS FET 630 W; 48 V; 920 - 960 MHz |
MAAM-011361 | High Gain High Linearity 0.5 W Driver Amplifier |
MACP-011117 | Coupler, 8 dB |
WST4200D | GaN-on-SiC Transistor, 30 W, 28 V, DC - 6 GHz |
MAAP-011378 | Power Amplifier, 0.5 W |
GTRA384802FC-V1 | High Power RF GaN-on-SiC HEMT 400 W, 48 V, 3600 - 3800 MHz |
MAPC-A1600 | GaN Amplifier 160 V, 150 W - MACOM PURE CARBIDE |
GTVA261701FA-V1 | High Power RF GaN-on-SiC HEMT 170 W, 50 V, 2.62 - 2.69 GHz |
PTMC210404MD-V2 | Wideband LDMOS Two-stage Integrated Power Amplifier 2 x 20 W; 28 V; 1805 - 2200 MHz |
MKVC-050100-13920T | Si Hi Q Shunt Capacitors 50 V MACOM KV CAPS™ |
MAPC-A3007 | GaN-on-SiC Transistor, 30 W, 28 V, DC - 6 GHz |
GTVA212701FA-V2 | High Power RF GaN-on-SiC HEMT 270 W, 48 V, 2110 - 2200 MHz |
MAAP-011379-DIE | Power Amplifier, 1 W |
WSM5100S | 8.5 - 10.5 GHz, 16W GaN T/R Module |
MADL-011116 | Diode Limiter |
CGH09120F | 120-W; UHF – 2.5-GHz; GaN HEMT for WCDMA; LTE; MC-GSM |
MAAP-011307 | High Linearity Distributed Power Amplifier |
MAAL-011246-DIE | Low Noise Amplifier 22 - 48 GHz |
CMPA2060040D1 | GaN High Power Amplifier, 40 W 2.0 -6.0 GHz |
MAPC-A1521 | GaN Amplifier 50 V, 150 W |
PXAD214218FV-V1 | High Power RF LDMOS FET 430 W; 28 V; 2110 - 2170 MHz |
MAEQ-39908 | Eight Channel 56GBaud (112Gbps) PAM-4 Linear Equalizer |
MAAL-011287 | Low Noise Amplifier with Bypass, 1400 to 6000 MHz |
MAAL-011245-DIE | Low Noise Amplifier 27 - 31.5 GHz |
GTVA262701FA-V2 | High Power RF GaN-on-SiC HEMT 270 W, 48 V, 2620 - 2690 MHz |
GTVA262711FA | High Power RF GaN-on-SiC HEMT 300 W, 48 V, 2620 - 2690 MHz |
MAPC-A3006 | GaN-on-SiC Transistor, 18 W, 28 V, DC - 8 GHz |
MADP-011184 | PIN Diode |
MA4P4006-1041 | PIN Diode |
MACP-011118 | Coupler, 17.3 dB 5 - 1800 MHz |
GTRB224402FC-V1 | High Power RF GaN-on-SiC HEMT 400 W, 48 V, 2110 - 2200 MHz |
MALD-39225 | Dual 53GBaud PAM4/NRZ VCSEL Driver |
GTRA362802FC-V1 | High Power RF GaN-on-SiC HEMT 280 W, 48 V, 3400 - 3600 MHz |
MAEQ-40914 | Quad Channel 227Gbps PAM-4 Linear Equalizer |
MLP7131-2012 | Surface Mount Limiter PIN Diode |
MACP-011079 | Coupler, 8 dB |
PXAE183708NB | High Power RF LDMOS FET 320 W; 28 V; 1805 - 1880 MHz |
MAMX-011144 | Double-Balanced Mixer |
PTVA082407NF | High Power RF LDMOS FET 240 W; 48 V; 746 - 821 MHz |
GTRA412852FC-V1 | High Power RF GaN-on-SiC HEMT 235 W, 48 V, 3700 - 4100 MHz |
MACP-011113 | Directional Coupler |
MAPC-A1524 | GaN Amplifier 45 V, 400 W |
GTRA263902FC-V2 | High Power RF GaN-on-SiC HEMT 370 W; 48 V; 2495 - 2690 MHz |
MAPC-A3009 | GaN-on-SiC Transistor, 60 W, 28 V, DC - 4 GHz |
MABA-011160 | 1:2 Transmission Line Balun |
GTRB184402FC | High Power RF GaN-on-SiC HEMT 440 W, 48 V, 1805 - 1880 MHz |
WST4050D | GaN-on-SiC Transistor, 10 W, 28 V, DC - 8 GHz |
PTRA093818NF-V1 | High Power RF LDMOS FET 415 W; 48 V; 925 - 960 MHz |
PTRA087008NB-V1 | High Power RF LDMOS FET 650 W; 48 V; 755 - 805 MHz |
WSDC2640-V1 | Thermally Enhanced GaN on SiC Ampl |
MAPC-C22440 | Thermally Enhanced GaN Amplifier 400 W, 48 V, 2110 - 2200 MHz |
MAAL-011222 | Low Noise Amplifier with Bypass, 650 to 4200 MHz |
GTRB266908FC-V1 | High Power RF GaN-on-SiC HEMT 500 W, 48 V, 2515 - 2675 MHz |
MAAP-011378-DIE | Power Amplifier, 0.5 W |
MAXP-37170F | 25 Gbps 288x288, 160x160 Crosspoint Switch & Signal Conditioner |
WGC40680V1A | Thermally Enhanced GaN Amplifier 500 W, 48 V, 3700 - 3980 MHz |
WSGPC01-V1 | Thermally Enhanced GaN on SiC Ampl |
WS1A2639-V1-R3K | 38.5 dBm GaN on SiC Power Amplifier Module; 2496-2690 MHz |
MAAP-011422-DIE | 10W, Ka Band Power Amplifier |
PXAE263708NB-V1 | High Power RF LDMOS FET 400 W (P3dB); 28 V; 2620 - 2690 MHz |
GTVA220701FA | High Power RF GaN-on-SiC HEMT 70 W, 50 V, 1805 - 2170 MHz |
GTVA261802FC-V1 | High Power RF GaN-on-SiC HEMT 170 W, 48 V, 2620 - 2690 MHz |
MACP-011083 | Coupler, 12.7 dB 5 - 1800 MHz |
MAPC-P1040 | GaN Amplifier Pallet 50 V, 300 W 2400 - 2500 MHz |
MASW-011226 | SP4T Absorptive Switch |
PXFC191507FC-V1 | High Power RF LDMOS FET 150 W; 28 V; 1805 - 1990 MHz |
GTRA184602FC-V1 | High Power RF GaN-on-SiC HEMT, 460 W, 48 V, 1805 - 1880 MHz |
PTRA084858NF-V1 | High Power RF LDMOS FET; 615 W; 48 V; 730 - 960 MHz |
PTGA090304MD-V2 | Wideband LDMOS Two-stage Integrated Power Amplifier 2 X 15 W; 48 V; 575 - 960 MHz |
GTRB424908FC | High Power RF GaN-on-SiC HEMT 450 W, 48 V, 3700 - 3980 MHz |
MAAP-011420-DIE | 1 W High Performance GaN Travelling Wave Amplifier MMIC |
MAAL-011229 | Low Noise Amplifier, 17 to 55 GHz |
MAPC-A1106 | GaN Amplifier 50 V, 85 W |
MKVC-0547R0 -14460T | Si Hi Q Shunt Capacitors 50 V MACOM KV CAPS™ |
PTRA094808NF-V1 | High Power RF LDMOS FET 480 W; 48 V; 859 - 960 MHz |
GTRB204402FC | High Power RF GaN-on-SiC HEMT 350 W, 48 V, 1930 - 2020 MHz |
MKVC-050100-14460T | Si Hi Q Shunt Capacitors 50 V MACOM KV CAPS™ |
WST4100D | GaN-on-SiC Transistor, 15 W, 28 V, DC - 8 GHz |
GTRA364002FC | High Power RF GaN-on-SiC HEMT 400 W; 48 V; 3400 - 3600 MHz |
WS1A3640 | 39.5 dBm GaN-on-SiC Power Amplifier Module; 3300-3800 MHz |
GTRA262802FC | High Power RF GaN-on-SiC HEMT 250 W; 48 V; 2490 - 2690 MHz |
MAAL-011251-DIE | GaN Low Noise Amplifier |
MAAP-011423-DIE | 7.5W, Power Amplifier 37 - 43 GHz |
MASW-011186-Q | SPDT Reflective Switch |
PXAE261908NF-V1 | High Power RF LDMOS FET 240 W,28 V, 2515 - 2675 MHz |
WGC20630-V1A | Thermally Enhanced GaN Amplifier 630 W, 48 V, 1930 - 2020 MHz |
GTRB226002FC-V1 | High Power RF GaN-on-SiC HEMT 450 W, 48 V, 2110 - 2200 MHz |
MASW-011209 | High Power Reflective SP2T Surface Mount Switch |
GTRB264318FC-V1 | High Power RF GaN-on-SiC HEMT 400 W, 48 V, 2500 - 2700 MHz |
MACP-011108 | Coupler, 17.3 dB |
GTRB266702FCV1A | High Power RF GaN on SiC HEMT, 610W, 48V, 2620-2690 MHz |
MAAP-011379 | Power Amplifier, 1 W |
MAAP-011410-DIE | 10W, Ka Band Power Amplifier |
MAEQ-40904 | Quad Channel 227Gbps Linear Equalizer |
MACP-011119 | 12 dB Coupler, 5 - 1800 MHz |
MAAP-011325 | Power Amplifier, 0.25 W |
GTRA362002FC-V1 | High Power RF GaN-on-SiC HEMT 200 W; 48 V; 3400 - 3600 MHz |
MABT-011011 | Bias Tee 0.03 - 67 GHz, 4mm SMD |
WGC18630 | Thermally Enhanced GaN Amplifier 48 V, 610 W |
GTRB206002FC | High Power RF GaN-on-SiC HEMT 500 W, 48 V, 1930 - 2020 MHz |
GTVB222611FAV1A | High Power RF GaN on SiC HEMT, 260W, 48V, 1805-2170 MHz |
MAAM-011302 | High Gain High Linearity 0.5 W Driver Amplifier |
MAPC-A1001 | GaN Amplifier 50 V, 50 W |
GTRB246608FC-V1 | High Power RF GaN-on-SiC HEMT 500 W, 48 V, 2300 - 2400 MHz |
MAPC-A3005 | GaN-on-SiC Transistor, 10 W, 28 V, DC - 8 GHz |
MAAP-011307-DIE | High Linearity Distributed Power Amplifier |
PTRA095908NB-V1 | High Power RF LDMOS FET; 520 W; 48 V; 925 - 960 MHz |
MADL-011115 | Diode Limiter |
GTRB384608FC-V1 | High Power RF GaN-on-SiC HEMT 400 W, 48 V, 3300 - 3800 MHz |
MATA-39224 | Dual Linear 112Gbps PAM4 Transimpedance Amplifier |
MAAM-011337 | LO Buffer Amplifier |
MASW-011208 | High Power Reflective SP3T Surface Mount Switch |
PTRA082808NF-V1 | High Power RF LDMOS FET 280 W; 48 V; 790 - 820 MHz |
GTRB097152NCV1A | Thermally Enhanced GaN Amplifier 820 W, 48 V, 758 - 960 MHz |
GTRB186002FC-V1 | High Power RF GaN-on-SiC HEMT 500 W, 48 V, 1805 - 1880 MHz |
MAPC-A1529 | GaN Amplifier 100 V, 1450 W Rev. V2P 3 - 700 MHz |
PTVA084007NF | High Power RF LDMOS FET 370 W; 48 V; 755 - 805 MHz |
PTRA083818NF-V1 | High Power RF LDMOS FET 275 W; 48 V; 733 - 805 MHz |
MADL-011121 | High Peak Power Surface Mount Limiter2 - 18 GHz |
MADL-011122-DIE | Diode Limiter |
MACP-011114 | Coupler, 7 dB |
GTRB267008FC-V1 | High Power RF GaN-on-SiC HEMT 620 W, 48 V, 2496 - 2690 MHz |
MASW-011201 | Switch, SP4T, 50 W |
PTRA097058NB-V1 | High Power RF LDMOS FET; 800 W; 48 V; 730 - 960 MHz |
MAPC-A2025 | GaN Amplifier 32 V, 8 W |
MACP-011096 | Bi-Directional Coupler |