CG2H30070
70 W; 0.5 - 3.0 GHz; GaN HEMT
The CG2H30070F is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT). It has an input match to deliver the best possible instantaneous broadband performance from 0.5-3.0 GHz. GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This device is available in a 2-lead metal/ceramic flanged package for optimal electrical and thermal performance.
Product Specifications
- Part Number
- CG2H30070
- Description
- 70 W; 0.5 - 3.0 GHz; GaN HEMT
- Min Frequency(MHz)
- 500
- Max Frequency(MHz)
- 3000
- Peak Output Power(W)
- 80
- Gain(dB)
- 15
- Efficiency(%)
- 55
- Operating Voltage(V)
- 28
- Form
- Packaged Discrete Transistor
- Package Category
- Flange
Features
- 85 W POUT typical at 28 V
- 10 dB Power Gain
- 58% Drain Efficiency
- Internally Matched