CG2H40010
10 W RF Power GaN HEMT
The CG2H40010 is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CG2H40010; operating from a 28-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities; making the CG2H40010 ideal for linear and compressed amplifier circuits. The transistor is available in both screw-down; flange and solder-down pill packages.
Product Specifications
- Part Number
- CG2H40010
- Description
- 10 W RF Power GaN HEMT
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 6000
- Peak Output Power(W)
- 10
- Efficiency(%)
- 65
- Operating Voltage(V)
- 28
- Form
- Packaged Discrete Transistor
- Package Category
- Pill
Features
- 18 dB Small Signal Gain at 2.0 GHz
- 16 dB Small Signal Gain at 4.0 GHz
- 17 W typical PSAT
- 70% Efficiency at PSAT
- 28 V Operation