CG2H40035
35 W RF Power GaN HEMT
The CG2H40035 is an unmatched; gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40035; operating from a 28 volt rail; offers a general purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities making the CG2H40035 ideal for linear and compressed amplifier circuits. The transistor is available in both a screw-down; flange package and solder-down; pill packages.
Product Specifications
- Part Number
- CG2H40035
- Description
- 35 W RF Power GaN HEMT
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 6000
- Peak Output Power(W)
- 35
- Gain(dB)
- 14.0
- Efficiency(%)
- 64
- Operating Voltage(V)
- 28
- Form
- Packaged Discrete Transistor
- Package Category
- Flange, Pill
- Technology
- GaN-on-SiC
Features
- 40 W typical PSAT
- 64% Efficiency at PSAT
- 14 dB Small Signal Gain at 3.5 GHz
- 28 V Operation