CG2H40045
45 W RF Power GaN HEMT
The CG2H40045 is an unmatched; gallium-nitride (GaN) high electron mobility transistor (HEMT). The CG2H40045; operating from a 28 volt rail; offers a general purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities making the CG2H40045 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package.
Product Specifications
- Part Number
- CG2H40045
- Description
- 45 W RF Power GaN HEMT
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 4000
- Peak Output Power(W)
- 45
- Efficiency(%)
- 55
- Operating Voltage(V)
- 28
- Form
- Packaged Discrete Transistor
- Package Category
- Pill
Features
- 18 dB Small Signal Gain at 2.0 GHz
- 14 dB Small Signal Gain at 4.0 GHz
- 55 W Typical PSAT
- 60% Efficiency at PSAT
- 28 V Operation