CG2H40120
120 W; RF Power GaN HEMT
The CG2H40120 is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CG2H40120; operating from a 28-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities; making the CG2H40120 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package.
Product Specifications
- Part Number
- CG2H40120
- Description
- 120 W; RF Power GaN HEMT
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 2500
- Peak Output Power(W)
- 130
- Gain(dB)
- 20
- Efficiency(%)
- 70
- Operating Voltage(V)
- 28
- Form
- Packaged Discrete Transistor
- Package Category
- Pill
Features
- 20 dB Small Signal Gain at 1.0 GHz
- 15 dB Small Signal Gain at 2.0 GHz
- 130 W Typical PSAT
- 70% Efficiency at PSAT
- 28 V Operation