CG2H80060D-GP4
60 W; 8.0 GHz; GaN HEMT Die
The CG2H80060D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity; and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.
Product Specifications
- Part Number
- CG2H80060D-GP4
- Description
- 60 W; 8.0 GHz; GaN HEMT Die
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 8000
- Peak Output Power(W)
- 60
- Efficiency(%)
- 70
- Operating Voltage(V)
- 28
- Form
- Discrete Bare Die
- Package Category
- Die
Features
- 28 V Operation
- High Breakdown Voltage
- High Temperature Operation
- Up to 8 GHz Operation
- High Efficiency