CGH25120F
120 W; 2300 - 2700 MHz; GaN HEMT for WiMAX and LTE
The CGH25120F is a gallium-nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency; high gain and wide bandwidth capabilities; which makes the CGH25120F ideal for 2.3-2.7GHz WiMAX; LTE and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package.
Product Specifications
- Part Number
- CGH25120F
- Description
- 120 W; 2300 - 2700 MHz; GaN HEMT for WiMAX and LTE
- Min Frequency(MHz)
- 2500
- Max Frequency(MHz)
- 2700
- Peak Output Power(W)
- 120
- Efficiency(%)
- 30
- Operating Voltage(V)
- 28
- Form
- Packaged Discrete Transistor
- Package Category
- Flange
Features
- 13 dB Gain
- -32 dBc ACLR at 20 W PAVE
- 30 % Efficiency at 20 W PAVE
- High Degree of DPD Correction Can be Applied