CGH27015

15 W; 28 V; GaN HEMT for Linear Communications ranging from VHF to 3 GHz

Note: CGH27015F is Not Recommended for New Designs. Refer to CG2H40010F. The CGH27015 is a gallium-nitride (GaN) high-electron-mobility transistor designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH27015 ideal for VHF; Comms; 3G; 4G; LTE; 2.3 ��2.9-GHz WiMAX and BWA amplifier applications. The unmatched transistor is available in both screw-down flange and solder-down pill packages.

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Product Specifications

Part Number
CGH27015
Description
15 W; 28 V; GaN HEMT for Linear Communications ranging from VHF to 3 GHz
Min Frequency(MHz)
0
Max Frequency(MHz)
6000
Peak Output Power(W)
15
Gain(dB)
14
Efficiency(%)
28
Operating Voltage(V)
28
Form
Packaged Discrete Transistor
Package Category
Pill

Features

  • 15 W Peak Power Capability
  • 14.5 dB Small Signal Gain
  • 2 W PAVE < 2.0% EVM
  • 28% Efficiency at 2 W Average Power

Technical Resources

Data Sheet

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CGH27015F
15W, 2.7GHz, WiMAX, 830116F, GAN HEMT, F
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CGH27015F-AMP
AMPLIFIER ASSY, 2.3 - 2.7GHz, INCLUDES C
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CGH27015P
15W, 2.7GHz, WiMAX, 830116P, GAN HEMT, P
Order Get a Quote Get a Sample