CGH27030
30 W; DC - 6.0 GHz; 28 V; GaN HEMT
Note: CGH27030F is Not Recommended for New Designs. Refer to CG2H40025F. The CGH27030 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH27030 ideal for VHF; Comms; 3G; 4G; LTE; 2.3-2.9GHz WiMAX and BWA amplifier applications. The transistor is available in screw-down flange; solder-down pill packages; and a 3mm x 4mm; surface mount; dual-flat-no-lead (DFN) package.
Product Specifications
- Part Number
- CGH27030
- Description
- 30 W; DC - 6.0 GHz; 28 V; GaN HEMT
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 6000
- Peak Output Power(W)
- 30
- Gain(dB)
- 15
- Efficiency(%)
- 28
- Operating Voltage(V)
- 28
- Form
- Packaged Discrete Transistor
- Package Category
- Surface Mount
Features
- 30 W Peak Power Capability
- > 15 dB Small Signal Gain
- > 28% Drain Efficiency