CGH27060F

8 W (average); 28 V; GaN HEMT for linear communications ranging from VHF to 3 GHz

Note: CGH27060F is Not Recommended for New Designs. Refer to CG2H40045F. The CGH27060F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH27060F ideal for VHF; Comms; 3G; 4G; LTE; 2.3 ��2.9-GHz WiMAX and BWA amplifier applications. The unmatched transistor is supplied in a ceramic/metal flange package.

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Product Specifications

Part Number
CGH27060F
Description
8 W (average); 28 V; GaN HEMT for linear communications ranging from VHF to 3 GHz
Min Frequency(MHz)
0
Max Frequency(MHz)
4000
Peak Output Power(W)
60
Gain(dB)
14
Efficiency(%)
27
Operating Voltage(V)
28
Form
Packaged Discrete Transistor
Package Category
Flange

Features

  • 14 dB Small Signal Gain
  • 8.0 W PAVE at < 2.0% EVM
  • 27% Drain Efficiency at 8 W Average Power

Technical Resources

Data Sheet

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CGH27060F
8 W (average); 28 V; GaN HEMT for linear communications ranging from VHF to 3 GHz
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