CGH35015
15 W; 3300 - 3900 MHz; 28 V; GaN HEMT for WiMAX
The CGH35015 is a gallium-nitride (GaN) high-electron-mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH35015 ideal for 3.3 - 3.9-GHz WiMAX and BWA amplifier applications. The transistor is available in both screw-down flange and solder-down pill packages.
Product Specifications
- Part Number
- CGH35015
- Description
- 15 W; 3300 - 3900 MHz; 28 V; GaN HEMT for WiMAX
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 6000
- Peak Output Power(W)
- 15
- Gain(dB)
- 12.0
- Efficiency(%)
- 26
- Operating Voltage(V)
- 28
- Form
- Packaged Discrete Transistor
- Package Category
- Pill
- Technology
- GaN-on-SiC
Features
- 3.3 – 3.9 GHz Operation
- 15 W Peak Power Capability
- 12 dB Small Signal Gain
- 2.0 W PAVE at 2.0% EVM
- 26% Efficiency at 2 W Average Power