CGH35060P1
60 W; 3300 - 3600 MHz; 28 V; GaN HEMT for WiMAX
The CGH35060P1 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH35060P1 ideal for 3.3 ��3.6-GHz WiMAX and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package.
Product Specifications
- Part Number
- CGH35060P1
- Description
- 60 W; 3300 - 3600 MHz; 28 V; GaN HEMT for WiMAX
- Min Frequency(MHz)
- 3300
- Max Frequency(MHz)
- 3600
- Peak Output Power(W)
- 60
- Gain(dB)
- 12
- Efficiency(%)
- 25
- Operating Voltage(V)
- 28
- Form
- Packaged Discrete Transistor
- Package Category
- Pill
Features
- 60 W Peak Power Capability
- 12 dB Small Signal Gain
- 8.0 W PAVE at < 2.0% EVM
- 25% Drain Efficiency at 8 W PAVE