CGH35240
240 W; 3100 - 3500 MHz; 50 - ohm Input/Output - Matched; GaN HEMT for S - Band Radar Systems
The CGH35240 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH35240 ideal for 3.1 - 3.5-GHz; S-band; radar-amplifier applications. The transistor is supplied in a ceramic/metal flange package.
Product Specifications
- Part Number
- CGH35240
- Description
- 240 W; 3100 - 3500 MHz; 50 - ohm Input/Output - Matched; GaN HEMT for S - Band Radar Systems
- Min Frequency(MHz)
- 3100
- Max Frequency(MHz)
- 3500
- Peak Output Power(W)
- 240
- Gain(dB)
- 11.6
- Efficiency(%)
- 57
- Operating Voltage(V)
- 28
- Form
- Packaged Discrete Transistor
- Package Category
- Flange
- Technology
- GaN-on-SiC
Features
- 3.1 – 3.5 GHz Operation
- 240 W Typical Output Power
- 11.6 dB Power Gain at PIN = 42.0 dBm
- 57% Typical Power Added Efficiency
- 50 Ohm Internally Matched
- <0.2 dB Pulsed Amplitude Droop