CGH40090
90 W RF Power GaN HEMT
The CGH40090PP is an unmatched; gallium-nitride (GaN) high electron mobility transistor (HEMT). The CGH40090PP; operating from a 28 volt rail; offers a general purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities making the CGH40090PP ideal for linear and compressed amplifier circuits. The transistor is available in a 4-lead flange package.
Product Specifications
- Part Number
- CGH40090
- Description
- 90 W RF Power GaN HEMT
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 4000
- Peak Output Power(W)
- 90
- Gain(dB)
- 14.0
- Efficiency(%)
- 55
- Operating Voltage(V)
- 28
- Form
- Packaged Discrete Transistor
- Package Category
- Push-Pull
- Technology
- GaN-on-SiC
Features
- Up to 2.5 GHz Operation
- 16 dB Small Signal Gain at 2.0 GHz
- 100 W Typical PSAT
- 55% Efficiency at PSAT
- 28 V Operation