CGH40120
120 W RF Power GaN HEMT
Note: CGH40120F is Not Recommended for New Designs. Refer to CCG2H40120F. The CGH40120 is an unmatched; gallium-nitride (GaN); high-electron-mobility transistor (HEMT). The CGH40120; operating from a 28-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities; making the CGH40120 ideal for linear and compressed amplifier circuits. The transistor is available in a metal-ceramic pill and flange package.
Product Specifications
- Part Number
- CGH40120
- Description
- 120 W RF Power GaN HEMT
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 3000
- Peak Output Power(W)
- 120
- Efficiency(%)
- 70
- Operating Voltage(V)
- 28
- Form
- Packaged Discrete Transistor
- Package Category
- Pill
Features
- 20 dB Small Signal Gain at 1.0 GHz
- 15 dB Small Signal Gain at 2.0 GHz
- 120 W Typical PSAT
- 70% Efficiency at PSAT
- 28 V Operation