CGH40180
180 W RF Power GaN HEMT
The CGH40180PP is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40180PP; operating from a 28-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities; making the CGH40180PP ideal for linear and compressed amplifier circuits. The transistor is available in a 4-lead flange package.
Product Specifications
- Part Number
- CGH40180
- Description
- 180 W RF Power GaN HEMT
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 3000
- Peak Output Power(W)
- 180
- Efficiency(%)
- 70
- Operating Voltage(V)
- 28
- Form
- Packaged Discrete Transistor
- Package Category
- Push-Pull
Features
- 20 dB Small Signal Gain at 1.0 GHz
- 15 dB Small Signal Gain at 2.0 GHz
- 220 W typical PSAT
- 70 % Efficiency at PSAT
- 28 V Operation