CGH55015
10 W; C - band; Unmatched; GaN HEMT
Note: CGH55015P2 is Not Recommended for New Designs. Refer to CCG2H40010P. The CGH55015F2/CGH55015P2 is a gallium-nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency; high gain and wide bandwidth capabilities; which makes the CGH55015F2/ CGH55015P2 ideal for C-band pulsed or CW saturated amplifiers. The transistor is available in both screw-down; flange and solder-down; pill packages. Based on appropriate external match adjustment; the CGH55015F2/CGH55015P2 is suitable for applications up to 6 GHz.
Product Specifications
- Part Number
- CGH55015
- Description
- 10 W; C - band; Unmatched; GaN HEMT
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 6000
- Peak Output Power(W)
- 10
- Gain(dB)
- 12
- Efficiency(%)
- 60
- Operating Voltage(V)
- 28
- Form
- Packaged Discrete Transistor
- Package Category
- Pill
Features
- 12 dB Small Signal Gain at 5.65 GHz
- 13 W typical PSAT
- 60% Efficiency at PSAT
- 28 V Operation