CGH55030
30 W; 5500 - 5800 MHz; 28 V; GaN HEMT for WiMAX
The CGH55030F1/CGH55030P1 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH55030F1/CGH55030P1 ideal for 5.5 ��5.8-GHz WiMAX and BWA amplifier applications. The transistor is available in both screw-down flange and solder-down pill packages. Based on appropriate external match adjustment; the CGH55030F1/CGH55030P1 is suitable for 4.9 ��5.5-GHz applications as well.
Product Specifications
- Part Number
- CGH55030
- Description
- 30 W; 5500 - 5800 MHz; 28 V; GaN HEMT for WiMAX
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 6000
- Peak Output Power(W)
- 30
- Gain(dB)
- 10
- Efficiency(%)
- 25
- Operating Voltage(V)
- 28
- Form
- Packaged Discrete Transistor
- Package Category
- Pill
Features
- 30 W Peak Power Capability
- 10 dB Small Signal Gain
- 4 W PAVE < 2.0% EVM
- 25% Efficiency at 4 W Average Power