CGH60120D-GP4
120 W; 6.0 GHz; GaN HEMT Die
The CGH60120D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity; and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.
Product Specifications
- Part Number
- CGH60120D-GP4
- Description
- 120 W; 6.0 GHz; GaN HEMT Die
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 6000
- Peak Output Power(W)
- 120
- Gain(dB)
- 12.0
- Efficiency(%)
- 65
- Operating Voltage(V)
- 28
Features
- 120 W Typical PSAT
- 28 V Operation
- High Breakdown Voltage
- High Temperature Operation
- Up to 6 GHz Operation
- High Efficiency