CGHV14250
250 W; DC - 1600 MHz; GaN HEMT for L - Band Radar Systems
The CGHV14250 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency; high gain and wide bandwidth capabilities; which makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar-amplifier applications. The transistor could be utilized for band-specific applications ranging from UHF through 1600 MHz. The package options are ceramic/metal flange and pill package.
Product Specifications
- Part Number
- CGHV14250
- Description
- 250 W; DC - 1600 MHz; GaN HEMT for L - Band Radar Systems
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 1600
- Peak Output Power(W)
- 250
- Gain(dB)
- 18.0
- Efficiency(%)
- 77
- Operating Voltage(V)
- 50
- Form
- Packaged Discrete Transistor
- Package Category
- Flange, Pill
- Technology
- GaN-on-SiC
Features
- FET Tuning range UHF through 1800 MHz
- 330 W Typical Output Power
- 18 dB Power Gain
- 77 % Typical Drain Efficiency
- < 0.3 dB Pulsed Amplitude Droop
- Internally pre-matched on input; unmatched output