CGHV1A250
8.8 - 9.6 GHz, 300 W, 45 V, Packaged GaN Transistor
The CGHV1A250F is a 300 W packaged transistor fully matched to 50 ohms at both input and output ports. Utilizing The high performance, 45 V, 0.25 um GaN on SiC production process, the CGHV1A250F operates from 8.8 - 9.6 GHz. It targets pulsed radar applications such a marine, defense and weather radar. The CGHV1A250F typically achieves 300 W of saturated output power with 12 dB of large signal gain and 40% drain efficiency under pulsed operation.
Product Specifications
- Part Number
- CGHV1A250
- Description
- 8.8 - 9.6 GHz, 300 W, 45 V, Packaged GaN Transistor
- Min Frequency(MHz)
- 8800
- Max Frequency(MHz)
- 9600
- Peak Output Power(W)
- 300
- Gain(dB)
- 12.0
- Efficiency(%)
- 40
- Operating Voltage(V)
- 45
- Form
- Packaged Discrete Transistor
- Package Category
- Flange
- Technology
- GaN-on-SiC
Features
- Psat: 300 W
- DE: 40 %
- LSG: 12 dB
- S21: 15 dB
- S11: -9 dB
- S22: -7 dB