CGHV1J006D-GP4

6 W; 18.0 GHz; GaN HEMT Die

The CGHV1J006D is a high-voltage gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on a silicon-carbide substrate; using a 0.25-?m gate-length fabrication process. This GaN-on-SiC product offers superior high-frequency; high-efficiency features. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.

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Product Specifications

Part Number
CGHV1J006D-GP4
Description
6 W; 18.0 GHz; GaN HEMT Die
Min Frequency(MHz)
0
Max Frequency(MHz)
18000
Peak Output Power(W)
6
Gain(dB)
17
Efficiency(%)
60
Operating Voltage(V)
40
Form
Discrete Bare Die
Package Category
Die

Features

  • 60% Typ. PAE at 10 GHz
  • 6 W Typical Psat
  • 40 V Operation
  • Up to 18GHz Operation

Technical Resources

Data Sheet

Model Data (Sparameters)

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CGHV1J006D-GP4
DIE, 6W, 18.0GHz, GaN HEMT, 1.2mm, GP4,
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