CGHV1J025D-GP4
25 W; 18.0 GHz; GaN HEMT Die
The CGHV1J025D is a high-voltage; gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on a silicon-carbide substrate; using a 0.25-μm gate-length fabrication process. This GaN-on-SiC product offers superior high-frequency; high-efficiency features. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.
Product Specifications
- Part Number
- CGHV1J025D-GP4
- Description
- 25 W; 18.0 GHz; GaN HEMT Die
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 18000
- Peak Output Power(W)
- 25
- Gain(dB)
- 17.0
- Efficiency(%)
- 60
- Operating Voltage(V)
- 40
Features
- 17 dB Typ. Small Signal Gain at 10 GHz
- 60% Typ. PAE at 10 GHz
- 25 W Typical PSAT
- 40 V Operation
- Up to 18 GHz Operation