CGHV1J070D-GP4
70 W; 18.0 GHz; GaN HEMT Die
The CGHV1J070D is a high-voltage gallium-nitride (GaN) high electron mobility transistor (HEMT) on a silicon-carbide substrate; using a 0.25-?m gate length fabrication process. This GaN-on-SiC product offers superior high-frequency; high-efficiency features. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.
Product Specifications
- Part Number
- CGHV1J070D-GP4
- Description
- 70 W; 18.0 GHz; GaN HEMT Die
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 18000
- Peak Output Power(W)
- 70
- Gain(dB)
- 17
- Efficiency(%)
- 60
- Operating Voltage(V)
- 40
- Form
- Discrete Bare Die
- Package Category
- Die
Features
- 60% Typ. PAE at 10 GHz
- 70 W Typical PSAT
- 40 V Operation
- Up to 18 GHz Operation