CGHV27030
30 W; DC - 6.0 GHz; GaN HEMT
The CGHV27030S is an unmatched; gallium-nitride (GaN) high electron mobility�transistor (HEMT) which offers high efficiency; high gain and wide bandwidth�capabilities. The CGHV27030S GaN HEMT devices are ideal for telecommunications�applications with frequencies of 700-960 MHz; 1200-1400 MHz; 1800-2200 MHz;�2500-2700 MHz; and 3300-3700 MHz at both 50 V and 28 V operations. The�CGHV27030S is also ideal for tactical communications applications operating from 20-2500�MHz; including land mobile radios. Additional applications include L-Band RADAR and S-Band RADAR. The�CGHV27030S can operate with either a 50 V or 28 V rail. The transistor is available in a 3mm x 4mm; surface mount;�dual-flat-no-lead (DFN) package.
Product Specifications
- Part Number
- CGHV27030
- Description
- 30 W; DC - 6.0 GHz; GaN HEMT
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 6000
- Peak Output Power(W)
- 30
- Gain(dB)
- 21
- Efficiency(%)
- 32
- Operating Voltage(V)
- 50
- Form
- Packaged Discrete Transistor
- Package Category
- Surface Mount
Features
- 30 W Typical Output Power
- 20 dB Gain at 5 W PAVE
- -34 dBc ACLR at 5 W PAVE
- 30% efficiency at 5 W PAVE
- High degree of APD and DPD correction can be applied