CGHV27060
60 W; DC to 2700 MHz; 50 V; GaN HEMT for LTE and Pulse-Radar Applications
The CGHV27060MP is a 60-W gallium-nitride (GaN) high-electron-mobility transistor (HEMT) housed in a small; plastic SMT package 4.4-mm x 6.5-mm. The transistor is a broadband device with no internal input or output match; which allows for the agility to apply to a wide range of frequencies from UHF through 2.7 GHz. The CGHV27060MP makes for an excellent transistor for pulsed applications at UHF; L-band or low S-band (<2.7 GHz). Additionally; the transistor is well suited for LTE micro-base-station amplifiers in the power class of 10 to 15-W average power in high-efficiency topologies such as Class A/B; F or Doherty amplifiers. The CGHV27060MP typical performance described in the data sheet is derived from a Class A/B reference design from 2.5 to 2.7 GHz.
Product Specifications
- Part Number
- CGHV27060
- Description
- 60 W; DC to 2700 MHz; 50 V; GaN HEMT for LTE and Pulse-Radar Applications
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 2700
- Peak Output Power(W)
- 60
- Gain(dB)
- 16.5
- Efficiency(%)
- 64
- Operating Voltage(V)
- 50
- Form
- Packaged Discrete Transistor
- Package Category
- Plastic
- Technology
- GaN-on-SiC
Features
- From UHF thru 2.7GHz
- 16.5 dB Gain at Pulsed PSAT
- 70% Efficiency at Pulsed PSAT
- 85 W at Pulsed PSAT
- 18 dB Gain at Linear PAVE = 14 W
- -35 dBc ACLR at Linear PAVE = 14 W
- 33% Efficiency at Linear PAVE = 14 W
- High Degree of DPD Correction Can be Applied