CGHV31500
500W, 2.7 - 3.1 GHz, GaN IMFET
The CGHV31500F1 is a gallium-nitride (GaN), fully matched IMFET housed in a thermally enhanced air cavity package. Operating at 50V, the device is capable of 500W of pulsed output power, with 2mS pulse lengths at 20% duty cycle.
Product Specifications
- Part Number
- CGHV31500
- Description
- 500W, 2.7 - 3.1 GHz, GaN IMFET
- Min Frequency(MHz)
- 2700
- Max Frequency(MHz)
- 3100
- Peak Output Power(W)
- 500
- Gain(dB)
- 12.7
- Efficiency(%)
- 60
- Operating Voltage(V)
- 50
- Form
- Packaged Discrete Transistor
- Package Category
- Flange
- Technology
- GaN-on-SiC
Features
- 650 W Typical Output Power
- 12 dB Power Gain
- 65% Typical Drain Efficiency
- 50 Ohm Internally Matched
- <0.3 dB Pulsed Amplitude Droop