CGHV31500

500W, 2.7 - 3.1 GHz, GaN IMFET

The CGHV31500F1 is a gallium-nitride (GaN), fully matched IMFET housed in a thermally enhanced air cavity package. Operating at 50V, the device is capable of 500W of pulsed output power, with 2mS pulse lengths at 20% duty cycle.

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Product Specifications

Part Number
CGHV31500
Description
500W, 2.7 - 3.1 GHz, GaN IMFET
Min Frequency(MHz)
2700
Max Frequency(MHz)
3100
Peak Output Power(W)
500
Gain(dB)
13
Efficiency(%)
60
Operating Voltage(V)
50
Form
Packaged Discrete Transistor
Package Category
Flange

Features

  • 650 W Typical Output Power
  • 12 dB Power Gain
  • 65% Typical Drain Efficiency
  • 50 Ohm Internally Matched
  • <0.3 dB Pulsed Amplitude Droop

Technical Resources

Data Sheet

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CGHV31500F
500W, GaN HEMT, 50V, 2.7-3.1GHz, PULSED,
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CGHV31500F-AMP
AMPLIFIER ASSY, INCLUDES CGHV31500F
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CGHV31500F1
GaN HEMT, G50V3, 500W, 2.7-3.1 GHz, 8302
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CGHV31500F1-AMP
AMPLIFIER ASSY, 2.7-3.1 GHz, INCLUDES CG
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