CGHV35060MP
60 W; 2700 to 3800 MHz; 50 V; GaN HEMT for S-Band Radar and LTE Base Stations
The CGHV35060MP is a 60-W input-matched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT) optimized for S-band performance. The CGHV35060MP is suitable for typical bands of 2.7 to 3.1 GHz and 3.1 to 3.8 GHz while the input-matched transistor provides optimal gain; power and efficiency in a small 6.5-mm x 4.4-mm plastic surface-mount (SMT) package. The typical performance plots in the data sheet are derived with CGHV35060MP matched into a 3.1 to 3.8-GHz high-power amplifier.
Product Specifications
- Part Number
- CGHV35060MP
- Description
- 60 W; 2700 to 3800 MHz; 50 V; GaN HEMT for S-Band Radar and LTE Base Stations
- Min Frequency(MHz)
- 2700
- Max Frequency(MHz)
- 3800
- Peak Output Power(W)
- 60
- Gain(dB)
- 14
- Efficiency(%)
- 67
- Operating Voltage(V)
- 50
- Form
- Packaged Discrete Transistor
- Package Category
- Plastic
Features
- 14.5 dB power gain
- 67% Drain efficiency
- Internally pre-matched on input; unmatched output