CGHV35150
150 W; 2900 - 3500 MHz; 50 V; GaN HEMT for S-Band Radar Systems
The CGHV35150 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGHV35150 ideal for 2.9�� 3.5-GHz S-band radar-amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package.
Product Specifications
- Part Number
- CGHV35150
- Description
- 150 W; 2900 - 3500 MHz; 50 V; GaN HEMT for S-Band Radar Systems
- Min Frequency(MHz)
- 2900
- Max Frequency(MHz)
- 3500
- Peak Output Power(W)
- 150
- Gain(dB)
- 14
- Efficiency(%)
- 50
- Operating Voltage(V)
- 50
- Form
- Packaged Discrete Transistor
- Package Category
- Pill
Features
- Operating Frequency = 2.9 � 3.5 GHz
- Transient 100 ?sec � 300 ?sec @ 20% Duty Cycle
- 13.5 dB Power Gain @ TCASE = 85�C
- 50 % Typical Drain Efficiency @ TCASE = 85�C
- Input Matched
- <0.3 dB Pulsed Amplitude Droop