CGHV35400
400 W; 2900 - 3500 MHz; 50 ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems
The CGHV35400F1 is a gallium-nitride (GaN) fully matched IMFET housed in a thermally enhanced air cavity package. Operating at 50V, the device is capable of 500W of pulsed output power, with 2mS pulse lengths at 20% duty cycle.
Product Specifications
- Part Number
- CGHV35400
- Description
- 400 W; 2900 - 3500 MHz; 50 ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems
- Min Frequency(MHz)
- 2900
- Max Frequency(MHz)
- 3500
- Peak Output Power(W)
- 400
- Gain(dB)
- 11
- Efficiency(%)
- 60
- Operating Voltage(V)
- 50
- Form
- Packaged Discrete Transistor
- Package Category
- Flange
Features
- 500 W Typical Output Power
- 11 dB Power Gain
- 70% Typical Drain Efficiency
- 50 Ohm Internally Matched
- <0.3 dB Pulsed Amplitude Droop