CGHV37400F
400 W; 3300 - 3700 MHz; 50 ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems
The CGHV37400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency; high gain and wide bandwidth capabilities; which makes the CGHV37400F ideal for 3.3 - 3.7 GHz S-Band radar amplifier applications. The transistor is matched to 50-ohms on the input and 50-ohms on the output. The CGHV37400 is based on The high power density 50 V; 0.4 �m GaN on silicon carbide (SiC) foundry process. The transistor is supplied in a ceramic/metal flange package.
Product Specifications
- Part Number
- CGHV37400F
- Description
- 400 W; 3300 - 3700 MHz; 50 ohm Input/Output Matched; GaN HEMT for S-Band Radar Systems
- Min Frequency(MHz)
- 3300
- Max Frequency(MHz)
- 3700
- Peak Output Power(W)
- 550
- Gain(dB)
- 14
- Efficiency(%)
- 55
- Operating Voltage(V)
- 48
- Form
- Packaged Discrete Transistor
- Package Category
- Flange
Features
- 525 W Typical Output Power
- 11.5 dB Power Gain
- 55% Typical Drain Efficiency
- 50 Ohm Internally Matched
- <0.3 dB Pulsed Amplitude Droop