CGHV40030
30 W; DC - 6 GHz; 50 V; GaN HEMT
The CGHV40030 is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high efficiency; high gain and wide bandwidth capabilities. The device can be deployed for L; S and C-Band amplifier applications. The data sheet specifications are based on a 0.96 - 1.4 GHz amplifier. The CGHV40030 operates on a 50-volt rail circuit while housed in a 2-lead flange or pill package.
Product Specifications
- Part Number
- CGHV40030
- Description
- 30 W; DC - 6 GHz; 50 V; GaN HEMT
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 6000
- Peak Output Power(W)
- 30
- Gain(dB)
- 16.0
- Efficiency(%)
- 70
- Operating Voltage(V)
- 50
- Form
- Packaged Discrete Transistor
- Package Category
- Flange, Pill
- Technology
- GaN-on-SiC
Features
- Up to 6 GHz Operation
- 30 W Typical Output Power
- 16 dB Gain
- Application circuit for 0.96 � 1.4 GHz
- 70% Efficiency at PSAT
- 50 V Operation