CGHV40050
50 W; DC - 4.0 GHz; 50 V; GaN HEMT
The CGHV40050 is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGHV40050; operating from a 50-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high-efficiency; high-gain and wide-bandwidth capabilities; making the CGHV40050 ideal for linear and compressed amplifier circuits. The transistor is available in a 2-lead flange and pill package.
Product Specifications
- Part Number
- CGHV40050
- Description
- 50 W; DC - 4.0 GHz; 50 V; GaN HEMT
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 4000
- Peak Output Power(W)
- 50
- Gain(dB)
- 16
- Efficiency(%)
- 53
- Operating Voltage(V)
- 50
- Form
- Packaged Discrete Transistor
- Package Category
- Pill
Features
- 77 W Typical Output Power
- 17.5 dB Small Signal Gain at 1.8 GHz
- Application Circuit for 0.8 � 2.0 GHz
- 53 % Efficiency at PSAT
- 50 V Operation