CGHV40100
100 W; DC CGHV40100 3 GHz; 50 V; GaN HEMT
The CGHV40100 is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGHV40100; operating from a 50-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities; making the CGHV40100 ideal for linear and compressed amplifier circuits. The transistor is available in a 2-lead flange and pill package.
Product Specifications
- Part Number
- CGHV40100
- Description
- 100 W; DC CGHV40100 3 GHz; 50 V; GaN HEMT
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 3000
- Peak Output Power(W)
- 100
- Gain(dB)
- 17.5
- Efficiency(%)
- 55
- Operating Voltage(V)
- 50
- Form
- Packaged Discrete Transistor
- Package Category
- Flange, Pill
- Technology
- GaN-on-SiC
Features
- Up to 3 GHz Operation
- 100 W Typical Output Power
- 17.5 dB Small Signal Gain at 2.0 GHz
- Application Circuit for 0.5 - 2.5 GHz
- 55% Efficiency at PSAT
- 50 V Operation