CGHV40180
180 W; DC - 2 GHz; GaN HEMT
The CGHV40180 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT). It has an input unmatched to deliver the best possible instantaneous broadband performance from DC-2.0 GHz. GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This device is available in a 2-lead metal/ceramic flange and pill package for optimal electrical and thermal performance.
Product Specifications
- Part Number
- CGHV40180
- Description
- 180 W; DC - 2 GHz; GaN HEMT
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 2000
- Peak Output Power(W)
- 200
- Gain(dB)
- 24
- Efficiency(%)
- 70
- Operating Voltage(V)
- 28
- Form
- Packaged Discrete Transistor
- Package Category
- Pill
Features
- 180 W (CW) Minimum Pout
- 250 W Typical Pout
- 24 dB Typical Small Signal Gain
- 28 V and 50 V Operation