CGHV40200
200 W RF Power GaN HEMT
The CGHV40200PP�is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGHV40200PP; operating from a 50-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities; making the CGHV40200PP�ideal for linear and compressed amplifier circuits. The transistor is available in a 4-lead flange package.
Product Specifications
- Part Number
- CGHV40200
- Description
- 200 W RF Power GaN HEMT
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 2000
- Peak Output Power(W)
- 250
- Gain(dB)
- 21
- Efficiency(%)
- 75
- Operating Voltage(V)
- 50
- Form
- Packaged Discrete Transistor
- Package Category
- Push-Pull
Features
- 21 dB Small Signal Gain at 1.8 GHz
- 250 W typical PSAT
- 67 % Efficiency at PSAT
- 50 V Operation