CGHV59070
70 W; 4500 to 5900 MHz; internally matched GaN HEMT for C-Band Radar Systems
The CGHV59070 is an internally matched; gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV59070; operating from a 50 volt rail; offers a general purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities making the CGHV59070 ideal for linear and compressed amplifier circuits. The transistor is available in a flange and pill package.
Product Specifications
- Part Number
- CGHV59070
- Description
- 70 W; 4500 to 5900 MHz; internally matched GaN HEMT for C-Band Radar Systems
- Min Frequency(MHz)
- 4500
- Max Frequency(MHz)
- 5900
- Peak Output Power(W)
- 70
- Gain(dB)
- 12
- Efficiency(%)
- 50
- Operating Voltage(V)
- 50
- Form
- Packaged Discrete Transistor
- Package Category
- Pill
Features
- 90 W POUT typical at 50 V
- 14 dB Power Gain
- 55 % Drain Efficiency
- Internally Matched