CGHV59350

350 W; 5200 to 5900 MHz; 50 ohm Input/Output-Matched; GaN HEMT

The CGHV59350 is a GaN HEMT designed with high-efficiency; high-gain; and wide-bandwidth. It's ideal for 5.2-5.9 GHz c-band radar-amplifier applications.

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Product Specifications

Part Number
CGHV59350
Description
350 W; 5200 to 5900 MHz; 50 ohm Input/Output-Matched; GaN HEMT
Min Frequency(MHz)
5200
Max Frequency(MHz)
5900
Peak Output Power(W)
350
Gain(dB)
11
Efficiency(%)
55
Operating Voltage(V)
50
Form
Packaged Discrete Transistor
Package Category
Pill

Features

  • 470 W Typical Output Power
  • 10.7 dB Power Gain
  • 60% Typical Drain Efficiency
  • 50 Ohm Internally Matched
  • <0.3 dB Pulsed Amplitude Droop

Technical Resources

Data Sheet

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CGHV59350F
Amplifier,350W, GaN HEMT, 50V,5.2-5.9GHz
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CGHV59350F-AMP2
50V, 350W, 5.2-5.9GHz
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CGHV59350P
350W, GaN HEMT, 50V, 5.2-5.9GHz, PULSED,
Order Get a Quote Get a Sample