CGHV60170D-GP4
170 W; 6.0 GHz; 50 V GaN HEMT Die
The CGHV60170D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated-electron-drift velocity; and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.
Product Specifications
- Part Number
- CGHV60170D-GP4
- Description
- 170 W; 6.0 GHz; 50 V GaN HEMT Die
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 6000
- Peak Output Power(W)
- 170
- Gain(dB)
- 17.0
- Efficiency(%)
- 65
- Operating Voltage(V)
- 50
- Form
- Discrete Bare Die
- Package Category
- Die
- Technology
- GaN-on-SiC
Features
- 65% Typical Power Added Efficiency
- 170 W Typical PSAT
- 50 V Operation
- High Breakdown Voltage
- Up to 6 GHz Operation