CGHV96100
100 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched; GaN HEMT Power Amplifier
The CGHV96100F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.
Product Specifications
- Part Number
- CGHV96100
- Description
- 100 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched; GaN HEMT Power Amplifier
- Min Frequency(MHz)
- 7900
- Max Frequency(MHz)
- 9600
- Peak Output Power(W)
- 100
- Gain(dB)
- 10
- Efficiency(%)
- 45
- Operating Voltage(V)
- 40
- Form
- Packaged Discrete Transistor
- Package Category
- Flange
Features
- 145 W POUT typical
- 10 dB Power Gain
- 40% Typical PAE
- 50 Ohm Internally Matched
- <0.3 dB Power Droop