CGHV96130F
130 W; 8.4 - 9.6 GHz; 50 ohm; Input/Output Matched GaN HEMT for X-Band Radar Applications
The CGHV96130F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.
Product Specifications
- Part Number
- CGHV96130F
- Description
- 130 W; 8.4 - 9.6 GHz; 50 ohm; Input/Output Matched GaN HEMT for X-Band Radar Applications
- Min Frequency(MHz)
- 8400
- Max Frequency(MHz)
- 9600
- Peak Output Power(W)
- 130
- Efficiency(%)
- 42
- Operating Voltage(V)
- 40
- Form
- Packaged Discrete Transistor
- Package Category
- Flange
Features
- 8.4 - 9.6 GHz Operation
- 166 W POUT typical
- 7.5 dB Power Gain
- 42% Typical PAE
- 50 Ohm Internally Matched
- <0.3 dB Power Droop