CGY2135UH

Power Amplifier, 33 dBm

The CGY2135UH/C1 is a high performance GaAs Power Amplifier MMIC designed to operate in the K-band. The device has an output power of 32.3 dBm at the 1 dB compression point and operates with a 4 V power supply. The small signal gain is 19 dB at 20.5 GHz and it exhibits a 20.2% PAE at the 1dB compression point. It can be used in radar, telecommunication and instrumentation applications. This die is manufactured using D01PH MACOM's 135 nm gate length pHEMT technology. The MMIC uses gold bonding pads and backside metallization and is fully protected with Silicon Nitride passivation to obtain the highest level of reliability. This process has been evaluated for space applications and is on the European Preferred Parts List of the European Space Agency (ESA).

Product Specifications

Part Number
CGY2135UH
Description
Power Amplifier, 33 dBm
Min Frequency(MHz)
18000
Max Frequency(MHz)
23000
Gain(dB)
25.0
Output P1dB(dBm)
31.20
PSAT(dBm)
33
Bias Current(mA)
1

Features

  • P1dB: 31.2 dBm @ 20.5 GHz
  • PSAT: 32.3 dBm @ 20.5 GHz
  • PAE: 20.2% @ 20.5 GHz @ P1dB
  • Gain: 25.4 dB @ 20.5 GHz
  • Power Supply: 4 V
  • 50 Ω Input & Output Matched
  • Input & Output Return Loss: 12 dB
  • Chip Size: 3.65 x 3.14 x 0.1 mm
  • Space and MIL-STD Available
  • RoHS* Compliant

Technical Resources

Datasheet


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CGY2135UH
Power Amplifier, 33 dBm