CMPA0060025
25 W; DC - 6.0 GHz; GaN MMIC Power Amplifier
The CMPA0060025 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC enables very wide bandwidths to be achieved in a small-footprint.
Product Specifications
- Part Number
- CMPA0060025
- Description
- 25 W; DC - 6.0 GHz; GaN MMIC Power Amplifier
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 6000
- Peak Output Power(W)
- 25
- Gain(dB)
- 18
- Efficiency(%)
- 33
- Operating Voltage(V)
- 50
- Form
- Packaged MMIC
- Package Category
- Die
Features
- 30 W Typical PSAT
- Operation up to 50 V
- High Breakdown Voltage
- High Temperature Operation