CMPA1D1E025
25 W; 13.75 to 14.5 GHz; 40 V; Ku-Band GaN MMIC Power Amplifier
The CMPA1D1E025F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT)-based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate; using a 0.25-?m gate length fabrication process. GaN-on-SiC has superior properties compared to silicon; gallium arsenide or GaN-on-Si; including higher breakdown voltage; higher saturated-electron-drift velocity and higher thermal conductivity. This Ku Band MMIC is available in a 10-lead; 25-mm x 9.9-mm; metal/ceramic flanged package for optimal electrical and thermal performance.
Product Specifications
- Part Number
- CMPA1D1E025
- Description
- 25 W; 13.75 to 14.5 GHz; 40 V; Ku-Band GaN MMIC Power Amplifier
- Min Frequency(MHz)
- 13500
- Max Frequency(MHz)
- 14500
- Peak Output Power(W)
- 25
- Gain(dB)
- 26
- Efficiency(%)
- 16
- Operating Voltage(V)
- 40
- Form
- Packaged MMIC
- Package Category
- Flange
Features
- 40 W Typical Pulsed PSAT
- Operation up to 40 V
- 20 W linear power under OQPSK
- Class A/B high gain; high efficiency 50 ohm MMIC Ku Band high power amplifier