CMPA1D1E030

30 W; 13.75 to 14.5 GHz; 40 V; GaN MMIC Power Amplifier

The CMPA1D1E030D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) based monolithic-microwave integrated circuit (MMIC) on a silicon carbide substrate; using a 0.25-?m gate-length fabrication process. GaN-on-SiC has superior properties compared to silicon; gallium arsenide or GaN-on-Si; including higher breakdown voltage; higher saturated-electron-drift velocity and higher thermal conductivity.

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Product Specifications

Part Number
CMPA1D1E030
Description
30 W; 13.75 to 14.5 GHz; 40 V; GaN MMIC Power Amplifier
Min Frequency(MHz)
13750
Max Frequency(MHz)
14500
Peak Output Power(W)
30
Gain(dB)
26
Efficiency(%)
25
Operating Voltage(V)
40
Form
MMIC Bare Die
Package Category
Die

Features

  • 30 W Typical PSAT
  • Operation up to 40 V
  • High Breakdown Voltage
  • High Temperature Operation

Technical Resources

Data Sheet

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CMPA1D1E030D
DIE, GaN MMIC, 30W, 13.25-14.75GHz, KU-B
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