CMPA1D1J001
12.7 - 18 GHz, 1W GaN MMIC HPA
The CMPA1D1J001S is a 1W package MMIC HPA utilizing The high performance, 0.15um GaN on SiC production process. The CMPA1D1J001S operates from 12.7-18 GHz and supports both radar and communication applications within both military and commercial markets. The CMPA1D1J001S achieves 1 W of saturated output power with 23 dB of large signal gain and typically 30% power-added efficiency under CW operation. Packaged in a 4x3 mm plastic overmold QFN, the CMPA1D1J001S provides superior broadband performance and environmental robustness in a small form factor allowing customers to improve SWaP-C benchmarks in their next-generation systems.
Product Specifications
- Part Number
- CMPA1D1J001
- Description
- 12.7 - 18 GHz, 1W GaN MMIC HPA
- Min Frequency(MHz)
- 12700
- Max Frequency(MHz)
- 18000
- Peak Output Power(W)
- 1
- Gain(dB)
- 23.0
- Efficiency(%)
- 30
- Operating Voltage(V)
- 28
- Form
- MMIC Bare Die
- Package Category
- Surface Mount
- Technology
- GaN-on-SiC
Features
- Psat: 1 W
- PAE: 30 %
- LSG: 23 dB
- S21: 27 dB
- S11: -10 dB
- S22: -8 dB
- CW operation
- Small 4 x 3 mm footprint
Technical Resources
Datasheet
Model Data (Sparameters)
- CMPA1D1J001S S-parameters
- CMPA1D1J001S S-parameters - VDD = 22 V - IDQ = 15 MA - 25C
- CMPA1D1J001S S-parameters - VDD = 22 V - IDQ = 30 MA - 25C
- CMPA1D1J001S S-parameters - VDD = 22 V - IDQ = 30 MA - -40C
- CMPA1D1J001S S-parameters - VDD = 22 V - IDQ = 30 MA - 85C
- CMPA1D1J001S S-parameters - VDD = 22 V - IDQ = 60 MA - 25C
- CMPA1D1J001S S-parameters - VDD = 24 V - IDQ = 30 MA - 25C