CMPA2060035
35 W; 2.0 - 6.0 GHz; 28V; GaN MMIC Power Amplifier
The CMPA2060035 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved in a small-footprint. Available in die and a screw-down package featuring a copper-tungsten heat sink.
Product Specifications
- Part Number
- CMPA2060035
- Description
- 35 W; 2.0 - 6.0 GHz; 28V; GaN MMIC Power Amplifier
- Min Frequency(MHz)
- 2000
- Max Frequency(MHz)
- 6000
- Peak Output Power(W)
- 35
- Gain(dB)
- 30
- Efficiency(%)
- 35
- Operating Voltage(V)
- 28
- Form
- Packaged MMIC
- Package Category
- Die
Features
- 35 W Typical PSAT
- Operation up to 32 V
- High Breakdown Voltage
- High Temperature Operation